Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: MOSpipeDescription: N Channel power MOSFET, IXYS HiperFET ™ Polar3 ™ Series Series IXYS Polar3 ™ Series N-channel power MOSFET with fast intrinsic diode (HiPerFET) ™) ### MOSFET transistors, a series of advanced discrete power MOSFET devices from IXYS20575+$21.497650+$20.5789200+$20.0644500+$19.93581000+$19.80722500+$19.66025000+$19.56837500+$19.4764 -
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Category: MOSpipeDescription: Mosfet n-Ch 600V 10A To220ab48235+$22.797550+$21.8232200+$21.2776500+$21.14121000+$21.00482500+$20.84905000+$20.75157500+$20.6541 -
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Category: Diode arrayDescription: Diode Switching 600V 10A 3Pin(3+Tab) TO-220AB Tube56915+$13.262050+$12.6952200+$12.3778500+$12.29851000+$12.21912500+$12.12855000+$12.07187500+$12.0151 -
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Category: Diode arrayDescription: IXYS SEMICONDUCTOR DPG30C400PB Fast/ultrafast diode, epitaxial diode (FRED), dual common cathode, 400 V, 15 A, 1.08 V, 45 ns, 150 A13025+$27.442450+$26.2696200+$25.6129500+$25.44871000+$25.28452500+$25.09695000+$24.97967500+$24.8623 -
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Category: IGBTtransistorDescription: IGBT Discrete components, IXYS XPT series XPT of IXYS ™ The series of discrete IGBT components adopts ultra light through-hole thin chip technology, which can reduce thermal resistance and energy loss. These devices provide fast switching time, low tail line current, and offer various industry standards and proprietary packaging. High power density and low VCE (sat) square reverse bias safe working area (RBSOA) up to rated breakdown voltage short-circuit capacity, ensuring a forward on voltage temperature coefficient of 10usec optional Co Pack Sonic FRD ™ Or HiPerFRED ™ International standards for diodes and proprietary high-voltage packaging # # IGBT discrete components and modules, IXYS insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.16971+$58.823510+$55.4484100+$52.9412250+$52.5554500+$52.16971000+$51.73582500+$51.35005000+$51.1090 -
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Category: MOSpipeDescription: Mosfet n-Ch 200V 72A To-22076415+$27.951350+$26.7568200+$26.0879500+$25.92071000+$25.75342500+$25.56235000+$25.44297500+$25.3234 -
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Category: MOSpipeDescription: Mosfet n-Ch 800V 2A To-22088465+$15.894550+$15.2152200+$14.8348500+$14.73971000+$14.64462500+$14.53605000+$14.46807500+$14.4001 -
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Category: MOSpipeDescription: IXYS SEMICONDUCTOR IXTP16N50P Transistor, MOSFET, Polarity FET, N-channel, 16A, 500 V, 400 Mohm, 10 V, 5.5 V63935+$5.780725+$5.352550+$5.0528100+$4.9243500+$4.83872500+$4.73165000+$4.688810000+$4.6246 -
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Category: MOSpipeDescription: TO-220 N-CH 75V 120A32835+$18.849950+$18.0443200+$17.5932500+$17.48041000+$17.36772500+$17.23885000+$17.15827500+$17.0777 -
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Category: Medium high voltage MOS transistorDescription: IXYS SEMICONDUCTOR IXTP3N60P Power Field Effect Transistor, MOSFET, N-channel, 3 A, 600 V, 2.9 ohm, 10 V, 5.5 V899610+$7.8900100+$7.4955500+$7.23251000+$7.21942000+$7.16685000+$7.10107500+$7.048410000+$7.0221 -
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Category: IGBTtransistorDescription: Igbt 42A 300V To-220ab29755+$29.131850+$27.8869200+$27.1897500+$27.01541000+$26.84112500+$26.64195000+$26.51747500+$26.3929 -
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Category: MOSpipeDescription: Mosfet n-Ch 600V 6.5A To220fp73625+$24.835650+$23.7742200+$23.1799500+$23.03131000+$22.88272500+$22.71295000+$22.60687500+$22.5006 -
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Category: MOSpipeDescription: Trans MOSFET N-CH 500V 30A 3Pin(3+Tab) PLUS 22090341+$64.502410+$61.6979100+$61.1931250+$60.8005500+$60.18351000+$59.90312500+$59.51045000+$59.1739 -
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Category: MOSpipeDescription: Trans MOSFET N-CH 800V 20A 3Pin(3+Tab) PLUS 22017131+$59.849510+$56.4156100+$53.8646250+$53.4721500+$53.07971000+$52.63822500+$52.24575000+$52.0004 -
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Category: MOSpipeDescription: N Channel power MOSFET, IXYS HiperFET ™ Polar3 ™ Series Series IXYS Polar3 ™ Series N-channel power MOSFET with fast intrinsic diode (HiPerFET) ™) ### MOSFET transistors, a series of advanced discrete power MOSFET devices from IXYS91325+$23.485450+$22.4818200+$21.9197500+$21.77921000+$21.63872500+$21.47815000+$21.37777500+$21.2774 -
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Category: Medium high voltage MOS transistorDescription: IXYS SEMICONDUCTOR IXFP10N60P Power Field Effect Transistor, MOSFET, N-channel, 10A, 600V, 740 Mohm, 10V, 5.5V963810+$6.0180100+$5.7171500+$5.51651000+$5.50652000+$5.46645000+$5.41627500+$5.376110000+$5.3560 -
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Category: MOSpipeDescription: N-CH 600V 16A66225+$24.359450+$23.3184200+$22.7354500+$22.58971000+$22.44402500+$22.27745000+$22.17337500+$22.0692 -
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Category: Diode arrayDescription: DIODE SCHOTTKY 180V 23A TO220AB74191+$299.422110+$291.611050+$285.6226100+$283.5397200+$281.9775500+$279.89451000+$278.59272000+$277.2909 -
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Category: Diode arrayDescription: Diode Schottky 30V 25A 3Pin(3+Tab) TO-220AB59365+$25.659350+$24.5627200+$23.9487500+$23.79511000+$23.64162500+$23.46625000+$23.35657500+$23.2469 -
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Category: Diode arrayDescription: Diode Schottky 45V 20A 3Pin(3+Tab) TO-220AB591110+$11.1036100+$10.5484500+$10.17831000+$10.15982000+$10.08585000+$9.99327500+$9.919210000+$9.8822 -
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Category: Diode arrayDescription: IXYS SEMICONDUCTOR DSEC16-12A Diode module, epitaxial diode (HiPerFRED), 1.2 kV, 10 A, 1.96 V, 1 pair of common cathodes, DSEC1 Series85605+$13.109950+$12.5496200+$12.2359500+$12.15741000+$12.07902500+$11.98945000+$11.93337500+$11.8773 -
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Category: Diode arrayDescription: IXYS SEMICONDUCTOR DSA60C45PB Small Signal Schottky Diode, Dual Common Cathode, 45V, 30A, 670mV, 280A, 175℃64365+$20.487950+$19.6123200+$19.1220500+$18.99941000+$18.87692500+$18.73685000+$18.64927500+$18.5617 -
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Category: Diode arrayDescription: Small signal Schottky diode, dual common cathode, 15 V, 20 A, 390 mV, 160 A, 150 ° C80625+$15.249850+$14.5981200+$14.2331500+$14.14191000+$14.05072500+$13.94645000+$13.88127500+$13.8160 -
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Category: Diode arrayDescription: Diode Schottky 30V 30A 3Pin(3+Tab) TO-220 Tube20015+$20.420050+$19.5474200+$19.0587500+$18.93651000+$18.81432500+$18.67475000+$18.58747500+$18.5002 -
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Category: Diode arrayDescription: IXYS SEMICONDUCTOR DSB60C45PB Small signal Schottky diode, dual common cathode, 45 V, 30 A, 600 mV, 320 A, 150 ° C76965+$19.333150+$18.5069200+$18.0442500+$17.92851000+$17.81292500+$17.68075000+$17.59817500+$17.5154
